US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Ferroelectric tunnel junction memory devices with enhanced read window" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,272, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric tunnel junction memory devices with enhanced read window" was invented by Wei Ting Hsieh (Hsinchu, Taiwan), Kuen-Yi Chen (Hsinchu, Taiwan), Yi-Hsuan Chen (Taoyuan, Taiwan), Yu-Wei Ting (Taipei, Taiwan), Yi Ching Ong (Hsinchu, Taiwan) and Kuo-Ching Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first capacitor having a ferroelectric film disposed between two electrodes, a second capacitor, having another dielectric film disposed between two electrodes. A first voltage is appli...