US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Dual etch-stop layer structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,488, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dual etch-stop layer structure" was invented by Hsi-Wen Tien (Xinfeng Township, Taiwan), Wei-Hao Liao (Taichung, Taiwan), Yu-Teng Dai (New Taipei, Taiwan), Hsin-Chieh Yao (Hsinchu, Taiwan), Chih Wei Lu (Hsinchu, Taiwan) and Chung-Ju Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip including a substrate. A first conductive wire is within a first dielectric layer that is over the substrate. A first etch-stop layer is over the first dielectric layer. A second etch-stop layer is...