US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Crystal seed layer for magnetic random access memory (MRAM)" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,255, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Crystal seed layer for magnetic random access memory (MRAM)" was invented by Tsann Lin (Taipei, Taiwan), Ji-Feng Ying (Hsinchu, Taiwan) and Chih-Chung Lai (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffe...