US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Contact and via structures for semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,291, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Contact and via structures for semiconductor devices" was invented by Mrunal A. Khaderbad (Hsinchu, Taiwan) and Keng-Chu Lin (Ping-Tung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The structure of a semiconductor device with source/drain contact structures and via structures and a method of fabricating the semiconductor device are disclosed. A method for fabricating a semiconductor device includes forming a source/drain (S/D) region on a substrate, forming a S/D contact structure on the S/D region, and forming a via structure on the S...