US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Circuit design and layout with high embedded memory density" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,256, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Circuit design and layout with high embedded memory density" was invented by Fa-Shen Jiang (Taoyuan, Taiwan), Hsia-Wei Chen (Taipei, Taiwan), Hsun-Chung Kuang (Hsinchu, Taiwan), Hai-Dang Trinh (Hsinchu, Taiwan) and Cheng-Yuan Tsai (Chu-Pei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a memory device. The memory device has a first transistor having a first source/drain and a second source/drain, where the first source/drain and the second source/drain are disposed in a s...