US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 23 for "Bridging-resistant microbump structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,586, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Bridging-resistant microbump structures and methods of forming the same" was invented by Han-Hsiang Huang (Hsinchu, Taiwan), Yen-Hao Chen (Taichung, Taiwan), Chien-Sheng Chen (Hsinchu, Taiwan) and Shin-Puu Jeng (Po-Shan Village, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bonded assembly including a first structure and a second structure is provided. The first structure includes first metallic connection structures surrounded of which a passivation dielectric layer includes openings therein, and first metallic bump structures having ...