ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,270, issued on Sept. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"3D memory multi-stack connection method" was invented by Chia-En Huang (Xinfeng Township, Taiwan), Meng-Han Lin (Hsinchu, Taiwan) and Ya-Hui Wu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first memory array including: a plurality of memory strings spaced from each other along a first lateral direction and a second lateral direction, each of the plurality of memory strings including a plurality of memory cells arranged along a vertical direction; and a plurality of first conductive structures extendi...