US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 2 for "Semiconductor structure with isolation structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,461, issued on Sept. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Semiconductor structure with isolation structure" was invented by Ching-Heng Liu (Miaoli County, Taiwan), Chang Yu Kuo (Miaoli County, Taiwan) and Ya-Wen Wu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first shallow trench isolation (STI) structure within a semiconductor substrate. The first STI structure includes a buffer structure, an adhesion structure, an electromagnetic reflection structure, and a fill structure. The adhesion structure is between and adhesively bonded to the buff...