US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 2 for "Semiconductor structure with conductive_structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,907, issued on Sept. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure with conductive_structure" was invented by Jia-Heng Wang (Kaohsiung, Taiwan), Pang-Chi Wu (Hsinchu, Taiwan), Chao-Hsun Wang (Taoyuan, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan) and Mei-Yun Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods for manufacturing the same are provided. The method includes a gate structure formed over a substrate, and a source/drain (S/D) structure formed adjacent to the gate structure. The semiconductor structure includes a dielectric layer form...