US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 2 for "Semiconductor structure having metal contact features" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,850, issued on Sept. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure having metal contact features" was invented by Chung-Liang Cheng (Changhua County, Taiwan) and Ziwei Fang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes an epitaxial structure over a semiconductor substrate. The semiconductor structure also includes a conductive feature over the semiconductor substrate. The conductive feature includes a high-k dielectric layer and a metal layer on the high-k dielectric layer, and a top surface o...