US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 2 for "Semiconductor device and method for forming capacitor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,419, issued on Sept. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method for forming capacitor structure" was invented by Meng-Han Lin (Hsinchu, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first device over a substrate, wherein the first device includes a gate stack including a gate electrode material; a source/drain region in the substrate adjacent the gate stack; a first isolation region surrounding the gate stack; a gate contact over and contacting the gate stack, wherein the...