US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 2 for "Semiconductor device, ferroelectric capacitor and laminated structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,413, issued on Sept. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device, ferroelectric capacitor and laminated structure" was invented by Ying-Chih Chen (Hsinchu, Taiwan) and Blanka Magyari-Kope (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a gate stack and a channel layer over the gate stack. The gate stack includes a metal gate electrode, a ferroelectric layer, and a semiconducting oxide layer disposed between the ferroelectric layer and the metal gate electrode. The semiconducting oxide layer has a thickness between approximately 1 micro metre and approxi...