US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 2 for "RRAM device structure and manufacturing method" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,568, issued on Sept. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"RRAM device structure and manufacturing method" was invented by Chung-Liang Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive random access memory cell includes a gate all around transistor and a resistor device. The resistor device includes a first electrode including a plurality of conductive nanosheets. The resistor device includes a high-K resistive element surrounds the conductive nanosheets. The resistor device includes a second electrode separated from the conductive nanosheets by the resistive element."

The...