ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,565, issued on Sept. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Phase-change memory devices" was invented by Tung Ying Lee (Hsinchu, Taiwan), Shao-Ming Yu (Zhubei, Taiwan) and Yu Chao Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a first metallization layer over a substrate, the substrate including active devices; a first bit line over the first metallization layer, the first bit line connected to first interconnects of the first metallization layer, the first bit line extending in a first direction, the first direction parallel to gates of the active ...