US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 2 for "Method to reduce breakdown failure in a MIM capacitor" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,354, issued on Sept. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method to reduce breakdown failure in a MIM capacitor" was invented by Hsing-Lien Lin (Hsin-Chu, Taiwan), Chii-Ming Wu (Taipei, Taiwan), Chia-Shiung Tsai (Hsin-Chu, Taiwan), Chung-Yi Yu (Hsin-Chu, Taiwan) and Rei-Lin Chu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present application are directed towards a method for forming a metal-insulator-metal (MIM) capacitor comprising an enhanced interfacial layer to reduce breakdown failure. In some embodiments, a bottom electrode layer is deposited over a sub...