US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 2 for "Memory device structure with data storage element" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,567, issued on Sept. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device structure with data storage element" was invented by Hai-Dang Trinh (Hsinchu, Taiwan), Hsing-Lien Lin (Hsinchu, Taiwan) and Cheng-Yuan Tsai (Chupei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The structure includes a substrate and a data storage element over the substrate. The structure also includes a protective element extending into the data storage element. A bottom surface of the protective element is between a top surface of the data storage element and a bottom surfa...