US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 2 for "Memory array circuit and method of manufacturing same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,316, issued on Sept. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory array circuit and method of manufacturing same" was invented by Hidehiro Fujiwara (Hsinchu, Taiwan), Chih-Yu Lin (Hsinchu, Taiwan), Hsien-Yu Pan (Hsinchu, Taiwan), Yasutoshi Okuno (Hsinchu, Taiwan), Yen-Huei Chen (Hsinchu, Taiwan) and Hung-Jen Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a first pull down transistor, a first pass gate transistor coupled to the first pull down transistor, a second pull down transistor, a second pass gate transistor and a first metal contact. The second pu...