ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,859, issued on Sept. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Gate structures in semiconductor devices" was invented by Hsiang-Pi Chang (New Taipei, Taiwan), Chung-Liang Cheng (Changhua County, Taiwan), I-Ming Chang (Shinchu, Taiwan), Yao-Sheng Huang (Kaohsiung, Taiwan) and Huang-Lin Chao (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming an interfacial oxide lay...