US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 2 for "Ferroelectric tunnel junctions with conductive electrodes having asymmetric nitrogen or oxygen profiles" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,349, issued on Sept. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric tunnel junctions with conductive electrodes having asymmetric nitrogen or oxygen profiles" was invented by Yi-Hsuan Chen (Taoyuan, Taiwan), Kuo-Ching Huang (Hsinchu, Taiwan), Kuen-Yi Chen (Taoyuan, Taiwan) and Yi Ching Ong (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a ferroelectric tunnel junction (FTJ), wherein the ferroelectric tunnel junction includes a first electrode, a ferroelectric layer disposed over the first electrode, and a second electrode disposed over the ferroelectric...