US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 16 for "Transistor source/drain contacts and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,072, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor source/drain contacts and methods of forming the same" was invented by Pei-Wen Wu (Xinfeng Township, Taiwan), Chun-Hsien Huang (Hsinchu, Taiwan), Wei-Jung Lin (Hsinchu, Taiwan) and Chih-Wei Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing an inter-layer dielectric (ILD) over a source/drain region; forming a contact opening through the ILD, wherein the contact opening exposes the source/drain region; forming a metal-semiconductor alloy region on the source/drain region; depositing a fir...