US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 16 for "Transistor gate structure and method of forming" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,920, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor gate structure and method of forming" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first nanostructure; a second nanostructure over the first nanostructure; a high-k gate dielectric around the first nanostructure and the second nanostructure, the high-k gate dielectric having a first portion on a top surface of the first nanostructure and a second portion on a bottom surface of the second nanostructur...