US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 16 for "Semiconductor device structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,097, issued on Sept. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD (Hsinchu, Taiwan).

"Semiconductor device structure and method for forming the same" was invented by Yin Wang (New Taipei, Taiwan) and Chunyao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack formed over the substrate. The semiconductor device structure includes a spacer structure formed over a sidewall of the gate stack. The spacer structure includes a dielectric layer, a silicon ri...