ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,981, issued on Sept. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device including graphene interconnect and method of making the semiconductor device" was invented by Shu-Wei Li (Hsinchu, Taiwan), Yu-Chen Chan (Hsinchu, Taiwan), Shin-Yi Yang (Hsinchu, Taiwan) and Ming-Han Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a plurality of intercalated graphene structures and a via. The intercalated graphene structures are disposed over the semiconductor substrate. Each of the intercalated graphene structures includes a...