US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 16 for "Semiconductor device having doped gate dielectric layer and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,918, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device having doped gate dielectric layer and method for forming the same" was invented by Yao-Teng Chuang (Hsinchu, Taiwan), Kuei-Lun Lin (Keelung, Taiwan), Te-Yang Lai (Hsinchu, Taiwan), Da-Yuan Lee (Jhubei, Taiwan), Weng Chang (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a semiconductor device is provided, which includes a first doped gate dielectric layer and a second doped gate dielectric layer, wherein the first doped gate dielectric layer and the second d...