ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,076, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Chien-Wei Lee (Kaohsiung, Taiwan), Hsueh-Chang Sung (Zhubei, Taiwan), Yen-Ru Lee (Hsinchu, Taiwan), Jyun-Chih Lin (Hsinchu, Taiwan), Tzu-Hsiang Hsu (Xinfeng Township, Taiwan) and Feng-Cheng Yang (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a source/drain region having a V-shaped bottom surface and extending below gate spacers adjacent a gate stack and a method of forming the same are disclosed. In an embodiment, a method includes forming...