US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 16 for "Method for forming dual silicide in manufacturing process of semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,077, issued on Sept. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming dual silicide in manufacturing process of semiconductor structure" was invented by Ying-Chi Su (Hsinchu, Taiwan), Li-Wei Chu (Hsinchu, Taiwan), Hung-Hsu Chen (Hsinchu, Taiwan), Chih-Wei Chang (Hsinchu, Taiwan) and Ming-Hsing Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes: forming a patterned structure which includes a first semiconductor portion and a second semiconductor portion, the first and second semiconductor portions having different...