ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,026, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Memory structure" was invented by Jhon-Jhy Liaw (Zhudong Township, Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes a static random access memory (SRAM) cell having a first pass-gate transistor and a second pass-gate transistor, a word-line conductor extending in a first direction, a first source/drain contact, a second source/drain contact, a bit-line conductor in a second direction, and a bit-line-bar conductor extending in the second direction. The second direction is perpendicular to the first...