US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 16 for "Memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,197, issued on Sept. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device and method of forming the same" was invented by Hsin-Wen Su (Hsinchu, Taiwan), Jui-Lin Chen (Taipei, Taiwan), Shih-Hao Lin (Hsinchu, Taiwan), Chih-Chuan Yang (Hsinchu, Taiwan), Ming-Yen Chuang (Hsinchu, Taiwan), Chenchen Jacob Wang (Hsinchu, Taiwan) and Ping-Wei Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to a memory device. The memory device includes a transistor having a first source/drain (S/D) region and a second S/D region, a first S/D contact disposed over the first S/D re...