ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,046, issued on Sept. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Memory device" was invented by Wen-Shun Lo (Hsinchu County, Taiwan), Tai-Yi Wu (Hsinchu County, Taiwan) and Yingkit Felix Tsui (Cupertino, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate, a first transistor, a second transistor, and a capacitor. The first transistor is over the substrate and includes a select gate. The second transistor is over the substrate and connected to the first transistor in series, in which the second transistor includes a floating gate. The capacitor is over the substrate a...