US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 16 for "Memory circuit and write method" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,799, issued on Sept. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory circuit and write method" was invented by Shih-Lien Linus Lu (Hsinchu, Taiwan), Bo-Feng Young (Hsinchu, Taiwan), Han-Jong Chia (Hsinchu, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Sai-Hooi Yeong (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of writing data to a memory array of three-terminal memory cells includes simultaneously programming a first subset of memory cells in a first column of the memory array to a first logic level by activating a first select line of the first column and a first bit line of t...