US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 16 for "Isolation structures in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,941, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd..

"Isolation structures in semiconductor devices" was invented by Jui-Chen Huang (Hsinchu, Taiwan), Szuya Liao (Hsinchu, Taiwan), Cheng-Yin Wang (Taipei, Taiwan), Wei-Cheng Lin (Taichung, Taiwan) and Wei-Cheng Tzeng (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with isolation structures and a method of fabricating the same are disclosed. The semiconductor device includes first and second FETs, an isolation structure, and a conductive structure. The first FET includes a first fin structure, a first array of gate structures disp...