US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 16 for "Integrated circuit structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,025, issued on Sept. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit structure" was invented by Jhon-Jhy Liaw (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit structure is provided. The integrated circuit structure includes at least one static random-access memory (SRAM) cell. The SRAM cell includes a first active region, a second active region, a first pull-up transistor, a second pull-up transistor, a first isolation transistor, a second isolation transistor, a first pass-gate transistor, a second pass-gate transistor, a first pull-down transistor and ...