ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,101, issued on Sept. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Integrated circuit device" was invented by Wen-Hsien Tu (New Taipei, Taiwan) and Dong-Jie Ke (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device is provided. The integrated circuit device includes a semiconductor substrate, first and second semiconductor fins over the semiconductor substrate, and first and second epitaxy structures respectively on the first and second semiconductor fins. The first epitaxy structure is merged with the second epitaxy structure, and a bottom surface of the second epitax...