US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 16 for "Integrated circuit and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,056, issued on Sept. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit and method for manufacturing the same" was invented by Tzu-Yu Chen (Hsinchu, Taiwan), Sheng-Hung Shih (Hsinchu, Taiwan) and Kuo-Chi Tu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a memory gate, and a data storage element. The semiconductor substrate includes a memory well which has two source/drain regions and a channel region between the source/drain regions. The memory gate is disposed above the channel region. The data storage element include...