ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,087, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Gate structures for semiconductor devices" was invented by Yen-Yu Chen (Taichung, Taiwan) and Chung-Liang Cheng (Changhua County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with different gate structure configurations and a method of fabricating the same are disclosed. The semiconductor device includes first and second pair of source/drain regions disposed on a substrate, first and second nanostructured channel regions, and first and second gate structures with effective work function values different from each ...