US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 16 for "Formation of self-assembled monolayer for selective etching process" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,924, issued on Sept. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Formation of self-assembled monolayer for selective etching process" was invented by Yi-Hsiu Chen (Hsinchu, Taiwan) and Kenichi Sano (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A selective etching process includes treating a first dielectric region and a second dielectric region of a semiconductor device with a self-assembled-monolayer-forming compound to form a self-assembled monolayer to selectively cover the first dielectric region so as to expose the second dielectric region; and selectively etching the second dielect...