US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 16 for "Film scheme to reduce plasma-induced damage" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,946, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Film scheme to reduce plasma-induced damage" was invented by Chia-Wen Zhong (Taichung, Taiwan), Yen-Liang Lin (Yilan County, Taiwan) and Yao-Wen Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip structure. The integrated chip structure includes a substrate. One or more lower interconnects are disposed within a lower inter-level dielectric (ILD) structure over the substrate. A plasma induced damage (PID) mitigation layer is disposed over the lower ILD structure. The PID mitig...