US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 16 for "Ferroelectric field-effect transistor (FeFET) memory" (California Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,796, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric field-effect transistor (FeFET) memory" was invented by Perng-Fei Yuh (Walnut Creek, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of memory cells. Each memory cell includes a multi-gate FeFET that has a first source/drain terminal, a second source/drain terminal, and a gate with a plurality of ferroelectric layers configured such that each of the ferroelectric layers has a respective unique switching E-field."

The patent was filed on Aug. 10, 2023, under Application No. 18/447,997.

*F...