ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,416,853, issued on Sept. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"EUV photo masks and manufacturing method thereof" was invented by Pei-Cheng Hsu (Taipei, Taiwan), Ta-Cheng Lien (Cyonglin Township, Taiwan) and Hsin-Chang Lee (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, Cr...