US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 16 for "Dielectric walls for complementary field effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,103, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dielectric walls for complementary field effect transistors" was invented by Cheng-Ting Chung (Hsinchu, Taiwan), Yi-Bo Liao (Hsinchu, Taiwan) and Jin Cai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a dielectric wall; nanostructures abutting the dielectric wall; a lower source/drain region adjoining a lower subset of the nanostructures; an upper source/drain region adjoining an upper subset of the nanostructures, the upper source/drain region oppositely doped from the lower source/drain reg...