US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 16 for "Device having a gate electrode wrapping around semiconductor layers and proximate to a dielectric fin" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,073, issued on Sept. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Device having a gate electrode wrapping around semiconductor layers and proximate to a dielectric fin" was invented by Lung-Kun Chu (New Taipei, Taiwan), Mao-Lin Huang (Hsinchu, Taiwan), Chung-Wei Hsu (Hsinchu County, Taiwan), Jia-Ni Yu (New Taipei, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device according to the present disclosure includes a fin structure disposed on a substrate and including a stack of semiconductor layers that are separated fr...