US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 16 for "Cross-point architecture for PCRAM" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,061, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Cross-point architecture for PCRAM" was invented by Kuo-Pin Chang (Hsinchu, Taiwan) and Kuo-Ching Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A cell array of a memory device includes: a first deck of memory cells arranged in a first row and a second row extending in a first horizontal direction and a plurality of columns extending in a second horizontal direction, wherein the memory cells in the second row in the first deck is displaced in the first horizontal direction with respect to the memory cells in the first row ...