ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,945, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Contact features of semiconductor device and method of forming same" was invented by Pei Shan Chang (Taipei, Taiwan), Yi-Hsiang Chao (New Taipei, Taiwan), Chun-Hsien Huang (Hsinchu, Taiwan), Peng-Hao Hsu (Hsinchu, Taiwan), Kevin Lee (Hsinchu, Taiwan), Shu-Lan Chang (Hsinchu, Taiwan), Ya-Yi Cheng (Taichung, Taiwan), Ching-Yi Chen (Hsinchu, Taiwan), Wei-Jung Lin (Hsinchu, Taiwan), Chih-Wei Chang (Hsinchu, Taiwan) and Ming-Hsing Tsai (Chu-Pei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a dielectric layer over a ...