US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 16 for "Barrier structure configured to increase performance of III-V devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,074, issued on Sept. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Barrier structure configured to increase performance of III-V devices" was invented by Yun-Hsiang Wang (Hsin-Chu, Taiwan), Chun Lin Tsai (Hsin-Chu, Taiwan), Jiun-Lei Jerry Yu (Zhudong Township, Taiwan), Po-Chih Chen (Hsinchu, Taiwan), Chia-Ling Yeh (Jhubei, Taiwan) and Ching Yu Chen (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed toward an integrated chip including an undoped layer overlying a substrate. A first barrier layer overlies the undoped layer. A doped layer overl...