US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 7 for "Via structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,837, issued on Oct. 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Via structure and methods of forming the same" was invented by Wei-Chieh Huang (Hsinchu County, Taiwan), Jieh-Jang Chen (Hsinchu County, Taiwan), Feng-Jia Shiu (Hsinchu County, Taiwan) and Chern-Yow Hsu (Hsin-Chu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a substrate having a conductive column, a dielectric layer over the conductive column, and a plurality of sacrificial blocks over the dielectric layer, the plurality of sacrificial blocks surrounding the conductive column from a top view; depositing a ...