US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 7 for "Transistor gate structures and methods of forming thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,648, issued on Oct. 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor gate structures and methods of forming thereof" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Weng Chang (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a semiconductor substrate; a vertically stacked set of nanostructures over the semiconductor substrate; a first source/drain region; and a second source/drain region, wherein the vertically stacked set of nanostructures extends between the first source/drain region and the second source/drain region along a first cross-s...