US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 7 for "Semiconductor structure with staggered selective growth" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,043, issued on Oct. 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor structure with staggered selective growth" was invented by Zhi-Chang Lin (Hsinchu County, Taiwan), Wei-Hao Wu (Hsinchu, Taiwan) and Teng-Chun Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate; a first conductive feature and a second conductive feature disposed on the semiconductor substrate; and a staggered dielectric feature interposed between the first and second conductive fea...