US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 7 for "Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufacture" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,836, issued on Oct. 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufacture" was invented by Tung Ying Lee (Hsinchu, Taiwan), Shao-Ming Yu (Zhubei, Taiwan) and Kai-Tai Chang (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a memory structure over a substrate, wherein the memory structure includes a first word line; a first bit line over the first word line; a second bit line over the first bit line; a memory material over sidewalls of the first bit line and the second bit line...