ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,666, issued on Oct. 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and methods of manufacture" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Weng Chang (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of manufacturing the semiconductor devices are disclosed herein. The methods include forming nanostructures in a multilayer stack of semiconductor materials. An interlayer dielectric is formed surrounding the nanostructures and a gate dielectric is formed surrounding the interlayer dielectric. A first work function...