ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,990, issued on Oct. 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method of manufacture" was invented by Wei-Min Liu (Hsinchu, Taiwan), Li-Li Su (Chubei, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes flowing first precursors over a semiconductor substrate to form an epitaxial region, the epitaxial region includes a first element and a second element; converting a second precursor into first radicals and first ions; separating the first radicals from the first ions; and flowing the first radicals over the epitaxial region to remov...